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Mukesh Khare
IBM Corporation - New York / United States
Engineering & Technology / Computer Science
AD Scientific Index ID: 4464698
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Mukesh Khare's MOST POPULAR ARTICLES
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Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFETN Loubet, T Hook, P Montanini, CW Yeung, S Kanakasabapathy, ...2017 Symposium on VLSI Technology, T230-T231, 20175122017
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A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channelsR Xie, P Montanini, K Akarvardar, N Tripathi, B Haran, S Johnson, T Hook, ...2016 IEEE international electron devices meeting (IEDM), 2.7. 1-2.7. 4, 20161392016
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High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithographyP Agnello, T Ivers, C Warm, R Wise, R Wachnik, D Schepis, S Sankaran, ...2006 International Electron Devices Meeting, 1-4, 20061292006
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A cost effective 32nm high-K/metal gate CMOS technology for low power applications with single-metal/gate-first processX Chen, S Samavedam, V Narayanan, K Stein, C Hobbs, C Baiocco, W Li, ...2008 symposium on vlsi technology, 88-89, 20081312008
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A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applicationsS Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ...2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 20111292011
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