Naoteru Shigekawa

Naoteru Shigekawa

Osaka Metropolitan University - Osaka / Japan
Others
AD Scientific Index ID: 420876
大阪府立大学
person_outline Naoteru Shigekawa's MOST POPULAR ARTICLES
1-) Optical study of high-biased AlGaN/GaN high-electron-mobility transistorsN Shigekawa, K Shiojima, T SuemitsuJournal of applied physics 92 (1), 531-535, 2002962002
2-) Realization of direct bonding of single crystal diamond and Si substratesJ Liang, S Masuya, M Kasu, N ShigekawaApplied Physics Letters 110 (11), 2017802017
3-) Current–voltage and spectral-response characteristics of surface-activated-bonding-based InGaP/GaAs/Si hybrid triple-junction cellsN Shigekawa, J Liang, R Onitsuka, T Agui, H Juso, T TakamotoJapanese Journal of Applied Physics 54 (8S1), 08KE03, 2015772015
4-) Electroluminescence of InAlAs/InGaAs HEMTs lattice-matched to InP substratesN Shigekawa, T Enoki, T Furuta, H ItoIEEE Electron Device Letters 16 (11), 515-517, 1995761995
5-) Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxyM Akazawa, B Gao, T Hashizume, M Hiroki, S Yamahata, N ShigekawaJournal of Applied Physics 109 (1), 2011752011