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Naoya Uene
Tohoku University - Sendai / Japan
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AD Scientific Index ID: 5003510
東北大学
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Naoya Uene's MOST POPULAR ARTICLES
1-)
Growth mechanism study of boron nitride atomic layer deposition by experiment and density functional theoryN Uene, T Mabuchi, M Zaitsu, Y Jin, S Yasuhara, T TokumasuComputational Materials Science 217, 111919, 202362023
2-)
Reactive force-field molecular dynamics simulation for the surface reaction of SiHx (x= 2–4) species on Si (1 0 0)-(2× 1): H surfaces in chemical vapor deposition processesN Uene, T Mabuchi, M Zaitsu, S Yasuhara, T TokumasuComputational Materials Science 204, 111193, 202262022
3-)
Study of reflection models of gas molecules on water adsorbed surfaces in high-speed flowsN Uene, H Takeuchi, Y Hayamizu, T TokumasuJournal of Fluid Science and Technology 15 (1), JFST0005-JFST0005, 202062020
4-)
Reactive force-field molecular dynamics study of SiGe thin film growth in plasma enhanced chemical vapor deposition processesN Uene, T Mabuchi, M Zaitsu, S Yasuhara, T TokumasuECS Transactions 98 (5), 177, 202052020
5-)
Reactive Force-Field Molecular Dynamics Study of the Effect of Gaseous Species on SiliconGermanium Alloy Growth by PECVD TechniquesN Uene, T Mabuchi, M Zaitsu, S Yasuhara, T Tokumasu2021 International Conference on Simulation of Semiconductor Processes and …, 202142021
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