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Naseer Babu
Samsung Electronics, South Korea - Gyeonggi / South Korea
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AD Scientific Index ID: 4736527
삼성전자, 한국
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Naseer Babu's MOST POPULAR ARTICLES
1-)
Tunnel Oxide Growth on Silicon With “Wet Nitrous Oxide” Process for Improved Performance CharacteristicsN Babu, KN BhatIEEE electron device letters 27 (11), 881-883, 200672006
2-)
Electrical and Reliability Studies of “Wet” Tunnel Oxides Grown on Silicon for Flash Memory ApplicationsPN Babu, G Govind, SMS Prasad, KN BhatIEEE Transactions on Device and Materials Reliability 7 (3), 420-428, 200732007
3-)
Semiconductor device with reduced poly spacing effectNB PazhedanUS Patent 9,704,881, 20172017
4-)
Integrated circuits having a metal gate structure and methods for fabricating the sameNB PazhedanUS Patent 9,337,296, 20162016
5-)
‘wet N2O oxidation’ process and interface state density characterization of nanoscale nitrided SiO2for flash memory applicationKN Bhat, PN Babu2007 International Workshop on Physics of Semiconductor Devices, 86-91, 20072007
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