NEWS
Free Institutional Consultancy Services
New Feature: Compare Your Institution with the Previous Year
Find a Professional: Explore Experts Across 197 Disciplines in 220 Countries!
Find a Professional
Print Your Certificate
New! Young University / Institution Rankings 2025
New! Art & Humanities Rankings 2025
New! Social Sciences and Humanities Rankings 2025
Highly Cited Researchers 2025
AD
Scientific Index 2025
Scientist Rankings
University Rankings
Subject Rankings
Country Rankings
login
Login
person_add
Register
insights
H-Index Rankings
insights
i10 Productivity Rankings
format_list_numbered
Citation Rankings
subject
University Subject Rankings
school
Young Universities
format_list_numbered
Top 100 Scientists
format_quote
Top 100 Institutions
format_quote
Compare & Choose
local_fire_department
Country Reports
person
Find a Professional
Nitin Prasad
National Institute of Standards and Technology - Maryland / United States
Others
AD Scientific Index ID: 4851380
Registration, Add Profile,
Premium Membership
Print Your Certificate
Ranking &
Analysis
Job
Experiences (0)
Education
Information (0)
Published Books (0)
Book Chapters (0)
Articles (0)
Presentations (0)
Lessons (0)
Projects (0)
Subject Leaders
Editorship, Referee &
Scientific Board (0 )
Patents /
Designs (0)
Academic Grants
& Awards (0)
Artistic
Activities (0)
Certificate / Course
/ Trainings (0)
Association &
Society Memberships (0)
Contact, Office
& Social Media
person_outline
Nitin Prasad's MOST POPULAR ARTICLES
1-)
Strongly Enhanced Tunneling at Total Charge Neutrality in Double-Bilayer Graphene- HeterostructuresGW Burg, N Prasad, K Kim, T Taniguchi, K Watanabe, AH MacDonald, ...Physical review letters 120 (17), 177702, 20181022018
2-)
Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe2 HeterostructuresGW Burg, N Prasad, B Fallahazad, A Valsaraj, K Kim, T Taniguchi, ...Nano letters 17 (6), 3919-3925, 2017562017
3-)
Effects of electrode layer band structure on the performance of multilayer graphene–hBN–graphene interlayer tunnel field effect transistorsS Kang, N Prasad, HCP Movva, A Rai, K Kim, X Mou, T Taniguchi, ...Nano letters 16 (8), 4975-4981, 2016382016
4-)
Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 HeterostructuresK Kim, N Prasad, HCP Movva, GW Burg, Y Wang, S Larentis, T Taniguchi, ...Nano letters 18 (9), 5967-5973, 2018382018
5-)
Conversion of spin current into charge current in a topological insulator: Role of the interfaceR Dey, N Prasad, LF Register, SK BanerjeePhysical Review B 97 (17), 174406, 2018332018
ARTICLES
Add your articles
We use cookies to personalize our website and offer you a better experience. If you accept cookies, we can offer you special services.
Cookie Policy
Accept