NEWS
New Feature!!!! University Subject Rankings in 12 branches
FOR SCIENTIST REGISTRATION FOR INSTITUTIONAL BULK REGISTRATION
FOR EDIT YOUR UNIVERSITY / INSTITUTION PAGE
Some differences of the AD Scientific Index
New Feature!!!! University Subject Rankings in 12 branches
List without CERN, Statistical Data etc. Only in AD Scientific Index
New Feature!!!! University Subject Rankings in 12 branches
AD
Scientific Index 2024
About Us
Methodology
Compare & Choose
Contact - FAQ
login
Login
person_add
Register
school
University Rankings
subject
University Subject Rankings
place
Country Rankings
insights
i10 Productivity Rankings
insights
Subject Rankings
format_list_numbered
Top 100 Scientists
format_list_numbered
Citation Rankings
format_quote
Top 100 Institutions
local_fire_department
Country Top Lists
Noboru Ohtani
AD Scientific Index 2024
Others
Kwansei Gakuin University - Nishinomiya / Japan
関西学院大学
Edit Form
Registration, Add Profile,
Premium Membership
Ranking &
Analysis
Job
Experiences (0)
Education
Information (0)
Published Books (0)
Book Chapters (0)
Articles (0)
Presentations (0)
Lessons (0)
Projects (0)
Congresses (0)
Editorship, Referee &
Scientific Board (0 )
Patents /
Designs (0)
Academic Grants
& Awards (0)
Artistic
Activities (0)
Certificate / Course
/ Trainings (0)
Association &
Society Memberships (0)
Contact, Office
& Social Media
person_outline
Noboru Ohtani's MOST POPULAR ARTICLES
1-)
Sublimation growth of 6H-and 4H-SiC single crystals in the [11¯ 0 0] and [1 12¯ 0] directionsJ Takahashi, N Ohtani, M Katsuno, S ShinoyamaJournal of crystal growth 181 (3), 229-240, 19971211997
2-)
Mechanism of molten KOH etching of SiC single crystals: Comparative study with thermal oxidationM Katsuno, N Ohtani, J Takahashi, H Yashiro, M KanayaJapanese journal of applied physics 38 (8R), 4661, 19991091999
3-)
Structural defects in α-SiC single crystals grown by the modified-Lely methodJ Takahashi, N Ohtani, M KanayaJournal of crystal growth 167 (3-4), 596-606, 19961091996
4-)
A RHEED study of the surface reconstructions of Si (001) during gas source MBE using disilaneWK Liu, SM Mokler, N Ohtani, C Roberts, BA JoyceSurface science 264 (3), 301-311, 1992941992
5-)
Modified‐Lely SiC Crystals Grown in [11‐00] and [112‐0] DirectionsJ Takahashi, N Ohtaniphysica status solidi (b) 202 (1), 163-175, 1997871997
ARTICLES
Add your articles
We use cookies to personalize our website and offer you a better experience. If you accept cookies, we can offer you special services.
Cookie Policy
Accept