Nobuya Hiroshiba

Nobuya Hiroshiba

Osaka Institute of Technology - Osaka / Japan
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 532200
大阪工業大学
person_outline Nobuya Hiroshiba's MOST POPULAR ARTICLES
1-) Sub-10 nm Nanofabrication via Nanoimprint Directed Self-Assembly of Block CopolymersSM Park, X Liang, BD Harteneck, TE Pick, N Hiroshiba, Y Wu, BA Helms, ...ACS nano 5 (11), 8523-8531, 20111542011
2-) C60 field effect transistor with electrodes modified by La@ C82N Hiroshiba, K Tanigaki, R Kumashiro, H Ohashi, T Wakahara, T AkasakaChemical physics letters 400 (1-3), 235-238, 2004542004
3-) Low-glancing-angle x-ray diffraction study on the relationship between crystallinity and properties of field effect transistorH Ohashi, K Tanigaki, R Kumashiro, S Sugihara, S Hiroshiba, S Kimura, ...Applied physics letters 84 (4), 520-522, 2004372004
4-) Energy-level alignments and photo-induced carrier processes at the heteromolecular interface of quaterrylene and N, N′-dioctyl-3, 4, 9, 10-perylenedicarboximideN Hiroshiba, R Hayakawa, T Chikyow, Y Yamashita, H Yoshikawa, ...Physical Chemistry Chemical Physics 13 (13), 6280-6285, 2011352011
5-) Single‐Electron Tunneling through Molecular Quantum Dots in a Metal‐Insulator‐Semiconductor StructureR Hayakawa, N Hiroshiba, T Chikyow, Y WakayamaAdvanced Functional Materials 21 (15), 2933-2937, 2011272011