Noriyuki Iwamuro

Noriyuki Iwamuro

University of Tsukuba - Tsukuba / Japan
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 425652
筑波大学
person_outline Noriyuki Iwamuro's MOST POPULAR ARTICLES
1-) IGBT history, state-of-the-art, and future prospectsN Iwamuro, T LaskaIEEE Transactions on Electron Devices 64 (3), 741-752, 20172122017
2-) Investigations of SiC MOSFET short-circuit failure mechanisms using electrical, thermal, and mechanical stress analysesK Yao, H Yano, H Tadano, N IwamuroIEEE Transactions on Electron Devices 67 (10), 4328-4334, 2020832020
3-) Numerical analysis of short-circuit safe operating area for p-channel and n-channel IGBTsN Iwamuro, A Okamoto, S Tagami, H MotoyamaIEEE transactions on electron devices 38 (2), 303-309, 1991791991
4-) Coexistence of small threshold voltage instability and high channel mobility in 4H-SiC (0001) metal–oxide–semiconductor field-effect transistorsM Okamoto, Y Makifuchi, M Iijima, Y Sakai, N Iwamuro, H Kimura, ...Applied Physics Express 5 (4), 041302, 2012612012
5-) Low on-resistance wide band gap semiconductor device and method for producing the sameN IwamuroUS Patent 8,564,028, 201359*2013