Örjan Danielsson

Örjan Danielsson

Linköping University - Linköping / Sweden
Others
AD Scientific Index ID: 1418498
Linköpings universitet
person_outline Örjan Danielsson's MOST POPULAR ARTICLES
1-) Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layersÖ Danielsson, A Henry, E JanzénJournal of crystal growth 243 (1), 170-184, 20021222002
2-) Nitrogen doping of epitaxial silicon carbideU Forsberg, Ö Danielsson, A Henry, MK Linnarsson, E JanzénJournal of Crystal Growth 236 (1-3), 101-112, 2002862002
3-) Aluminum doping of epitaxial silicon carbideU Forsberg, Ö Danielsson, A Henry, MK Linnarsson, E JanzénJournal of crystal growth 253 (1-4), 340-350, 2003742003
4-) Precursors for carbon doping of GaN in chemical vapor depositionX Li, Ö Danielsson, H Pedersen, E Janzén, U ForsbergJournal of Vacuum Science & Technology B 33 (2), 2015522015
5-) Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device resultsX Li, J Bergsten, D Nilsson, Ö Danielsson, H Pedersen, N Rorsman, ...Applied Physics Letters 107 (26), 2015492015