Osamu Nakatsuka 中塚 理

Osamu Nakatsuka 中塚 理

Nagoya University - Nagoya / Japan
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 418181
名古屋大学
person_outline Osamu Nakatsuka 中塚 理's MOST POPULAR ARTICLES
1-) High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high insulator systemsK Kobayashi, M Yabashi, Y Takata, T Tokushima, S Shin, K Tamasaku, ...Applied physics letters 83 (5), 1005-1007, 20034052003
2-) Growth and applications of GeSn-related group-IV semiconductor materialsS Zaima, O Nakatsuka, N Taoka, M Kurosawa, W Takeuchi, M SakashitaScience and technology of advanced materials 16 (4), 043502, 20151582015
3-) Growth of highly strain-relaxed Ge1− xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded methodS Takeuchi, Y Shimura, O Nakatsuka, S Zaima, M Ogawa, A SakaiApplied physics letters 92 (23), 20081572008
4-) Characterization of GeSn materials for future Ge pMOSFETs source/drain stressorsB Vincent, Y Shimura, S Takeuchi, T Nishimura, G Eneman, A Firrincieli, ...Microelectronic Engineering 88 (4), 342-346, 20111562011
5-) Development of Ni/Al and Ni/Ti/Al ohmic contact materials for p-type 4H-SiCR Konishi, R Yasukochi, O Nakatsuka, Y Koide, M Moriyama, M MurakamiMaterials Science and Engineering: B 98 (3), 286-293, 20031252003