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Paolo Magnone
Università degli Studi di Padova - Padova / Italy
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AD Scientific Index ID: 1852869
University of Padua
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Paolo Magnone's MOST POPULAR ARTICLES
1-)
Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTsAN Tallarico, S Stoffels, P Magnone, N Posthuma, E Sangiorgi, ...IEEE Electron Device Letters 38 (1), 99-102, 20161362016
2-)
Noise in Drain and Gate Current of MOSFETs With High- Gate StacksP Magnone, F Crupi, G Giusi, C Pace, E Simoen, C Claeys, L Pantisano, ...IEEE Transactions on Device and Materials Reliability 9 (2), 180-189, 20091442009
3-)
PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on and Underlying Degradation MechanismsAN Tallarico, S Stoffels, N Posthuma, P Magnone, D Marcon, S Decoutere, ...IEEE Transactions on Electron Devices 65 (1), 38-44, 2017682017
4-)
Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacksF Crupi, P Srinivasan, P Magnone, E Simoen, C Pace, D Misra, C ClaeysIEEE Electron Device Letters 27 (8), 688-691, 2006702006
5-)
Impact of hot carriers on nMOSFET variability in 45-and 65-nm CMOS technologiesP Magnone, F Crupi, N Wils, R Jain, H Tuinhout, P Andricciola, G Giusi, ...IEEE Transactions on Electron Devices 58 (8), 2347-2353, 2011692011
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