Paulo Fernandes

Paulo Fernandes

Instituto Politécnico do Porto - Porto / Portugal
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 1853588
Polytechnic Institute of Porto
person_outline Paulo Fernandes's MOST POPULAR ARTICLES
1-) Study of polycrystalline Cu2ZnSnS4 films by Raman scatteringPA Fernandes, PMP Salomé, AF Da CunhaJournal of alloys and compounds 509 (28), 7600-7606, 20117522011
2-) Growth and Raman scattering characterization of Cu2ZnSnS4 thin filmsPA Fernandes, PMP Salomé, AF Da CunhaThin solid films 517 (7), 2519-2523, 20095942009
3-) A study of ternary Cu2SnS3 and Cu3SnS4 thin films prepared by sulfurizing stacked metal precursorsPA Fernandes, PMP Salomé, AF da CunhaJournal of Physics D: Applied Physics 43 (21), 215403, 20105252010
4-) Photoluminescence and electrical study of fluctuating potentials in CuZnSnS-based thin filmsJP Leitao, NM Santos, PA Fernandes, PMP Salomé, AF Da Cunha, ...Physical Review B—Condensed Matter and Materials Physics 84 (2), 024120, 20111912011
5-) CuxSnSx+1 (x = 2, 3) thin films grown by sulfurization of metallic precursors deposited by dc magnetron sputteringPA Fernandes, PMP Salomé, AF Da Cunhaphysica status solidi c 7 (3‐4), 901-904, 20101892010