Peng Zhao

Peng Zhao

Micron Technology Inc - - / United States
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 4523804
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person_outline Peng Zhao's MOST POPULAR ARTICLES
1-) Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodesPD Lomenzo, P Zhao, Q Takmeel, S Moghaddam, T Nishida, M Nelson, ...Journal of Vacuum Science & Technology B, Nanotechnology and …, 20141102014
2-) Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance–voltage analysisP Zhao, A Khosravi, A Azcatl, P Bolshakov, G Mirabelli, E Caruso, ...2D Materials 5 (3), 031002, 2018652018
3-) Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layerP Bolshakov, P Zhao, A Azcatl, PK Hurley, RM Wallace, CD YoungApplied Physics Letters 111 (3), 032110, 2017562017
4-) Contact Engineering for Dual-Gate MoS2 Transistors Using O2 Plasma ExposureP Bolshakov, CM Smyth, A Khosravi, P Zhao, PK Hurley, CL Hinkle, ...ACS Applied Electronic Materials 1 (2), 210-219, 2019582019
5-) Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectricsP Bolshakov, A Khosravi, P Zhao, PK Hurley, CL Hinkle, RM Wallace, ...Applied Physics Letters 112 (25), 2018522018