Peter Persans

Peter Persans

Rensselaer Polytechnic Institute - Troy / United States
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 1463923
Rensselaer Polytechnic Institute
person_outline Peter Persans's MOST POPULAR ARTICLES
1-) Room-temperature sub-band gap optoelectronic response of hyperdoped siliconJP Mailoa, AJ Akey, CB Simmons, D Hutchinson, J Mathews, JT Sullivan, ...Nature communications 5 (1), 1-8, 20141992014
2-) Porous silica materials as low-k dielectrics for electronic and optical interconnectsA Jain, S Rogojevic, S Ponoth, N Agarwal, I Matthew, WN Gill, P Persans, ...Thin Solid Films 398, 513-522, 20011552001
3-) AMORPHOUS SEMICONDUCTING SILICON-HYDROGEN ALLOYSPP H. Fritzsche, S. C. TsaiSolid State Technology 21, 55-60, 1978147*1978
4-) Optical studies of the growth of Cd 1− x Zn x S nanocrystals in borosilicate glassH Yükselici, PD Persans, TM HayesPhysical Review B 52 (16), 11763, 19951431995
5-) Raman scattering as a compositional probe of II‐VI ternary semiconductor nanocrystalsA Tu, PD PersansApplied physics letters 58 (14), 1506-1508, 19911401991