Petros Beleniotis

Petros Beleniotis

Brandenburgische Technische Universität Cottbus - Cottbus / Germany
Others
AD Scientific Index ID: 5432061
Brandenburg University of Technology Cottbus-Senftenberg
person_outline Petros Beleniotis's MOST POPULAR ARTICLES
1-) In-situ SiNx/InN structures for InN field-effect transistorsC Zervos, A Adikimenakis, P Beleniotis, A Kostopoulos, M Kayambaki, ...Applied Physics Letters 108 (14), 2016112016
2-) An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMTP Beleniotis, F Schnieder, S Krause, S Haque, M RudolphInternational Journal of Microwave and Wireless Technologies 14 (2), 134-142, 202282022
3-) Characterization of the impairment and recovery of GaN-HEMTs in low-noise amplifiers under input overdriveS Krause, P Beleniotis, O Bengtsson, M Rudolph, W Heinrich2021 IEEE MTT-S International Microwave Symposium (IMS), 515-518, 202172021
4-) Localization of Trapping Effects in GaN HEMTs with Pulsed S-parameters and Compact ModelsP Beleniotis, F Schnieder, S Chevtchenko, M Rudolph2022 17th European Microwave Integrated Circuits Conference (EuMIC), 202262022
5-) Investigation of Traps Impact on PAE and Linearity of AlGaN/GaN HEMTs Relying on a Combined TCAD–Compact Model ApproachP Beleniotis, C Zervos, S Krause, S Chevtchenko, D Ritter, M RudolphIEEE Transactions on Electron Devices, 202442024