Pierre Morin

Pierre Morin

Interuniversity Microelectronics Centre - Leuven / Belgium
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 4983634
person_outline Pierre Morin's MOST POPULAR ARTICLES
1-) Nickel vs. Cobalt Silicide integration for sub-50nm CMOS - B Froment, M Muller, H Brut, R Pantel, V Carron, H Achard, A Halimaoui, ...
2-) High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond - Q Liu, M Vinet, J Gimbert, N Loubet, R Wacquez, L Grenouillet, Y Le Tiec, ...
3-) Passivation issues in Active Pixel CMOS Image Sensors - J Regolini, D Benoit, P Morin
4-) Defect-free strain relaxed buffer layerP Morin, K Cheng, J Fronheiser, X Cai, J Li, S Mochizuki, R Xie, H He, ...US Patent App. 14/588,221, 2016842016
5-) First monolithic integration of 3d complementary fet (cfet) on 300mm wafersS Subramanian, M Hosseini, T Chiarella, S Sarkar, P Schuddinck, ...2020 Ieee Symposium on Vlsi Technology, 1-2, 2020822020