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Puneet Goyal
Qualcomm Inc - San Diego / United States
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AD Scientific Index ID: 5498159
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Puneet Goyal's MOST POPULAR ARTICLES
1-)
A 0.039um2 high performance eDRAM cell based on 32nm High-K/Metal SOI technologyN Butt, K Mcstay, A Cestero, H Ho, W Kong, S Fang, R Krishnan, B Khan, ...2010 International Electron Devices Meeting, 27.5. 1-27.5. 4, 2010392010
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Performance analysis and modeling of deep trench decoupling capacitor for 32 nm high-performance SOI processors and beyondB Jayaraman, S Gupta, Y Zhang, P Goyal, H Ho, R Krishnan, S Fang, ...2012 IEEE International Conference on IC Design & Technology, 1-4, 2012172012
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DRAM with schottky barrier FET and MIM trench capacitorP Goyal, HL Ho, P Jana, J LiuUS Patent 8,343,864, 201382013
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Modeling and characterization of gate leakage in high-K metal gate technology-based embedded DRAMM Bajaj, RK Pandey, S De, ND Sathaye, B Jayaraman, R Krishnan, ...IEEE transactions on electron devices 60 (12), 4152-4158, 201342013
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Design and simulation of strained-Si/strained-SiGe dual channel hetero-structure MOSFETsP Goyal32007
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