Purushothaman Srinivasan

Purushothaman Srinivasan

GlobalFoundries - New York / United States
Others
AD Scientific Index ID: 5050645
person_outline Purushothaman Srinivasan's MOST POPULAR ARTICLES
1-) Noise in Drain and Gate Current of MOSFETs With High- Gate StacksP Magnone, F Crupi, G Giusi, C Pace, E Simoen, C Claeys, L Pantisano, ...IEEE Transactions on Device and Materials Reliability 9 (2), 180-189, 20091432009
2-) Graphene: Is it the future for semiconductors? An overview of the material, devices, and applicationsY Obeng, P SrinivasanThe Electrochemical Society Interface 20 (1), 47, 2011692011
3-) Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacksF Crupi, P Srinivasan, P Magnone, E Simoen, C Pace, D Misra, C ClaeysIEEE Electron Device Letters 27 (8), 688-691, 2006692006
4-) A 7nm CMOS technology platform for mobile and high performance compute applicationS Narasimha, B Jagannathan, A Ogino, D Jaeger, B Greene, C Sheraw, ...2017 IEEE International Electron Devices Meeting (IEDM), 29.5. 1-29.5. 4, 2017682017
5-) Reliability comparison of triple-gate versus planar SOI FETsF Crupi, B Kaczer, R Degraeve, V Subramanian, P Srinivasan, E Simoen, ...IEEE Transactions on electron devices 53 (9), 2351-2357, 2006532006