Qi Xie

Qi Xie

Fudan University - Shanghai / China
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 729944
复旦大学
person_outline Qi Xie's MOST POPULAR ARTICLES
1-) System and method for gas-phase sulfur passivation of a semiconductor surfaceF Tang, ME Givens, Q Xie, P RaisanenUS Patent 9,558,931, 20173362017
2-) Selective deposition of aluminum and nitrogen containing materialH Wang, Q Xie, D Longrie, JW Maes, D De Roest, J Hsieh, C Zhu, ...US Patent 10,566,185, 20204882020
3-) Semiconductor structure and device and methods of forming same using selective epitaxial processQ Xie, V Machkaoutsan, JW MaesUS Patent 9,240,412, 20164862016
4-) Method for forming metal chalcogenide thin films on a semiconductor deviceF Tang, ME Givens, JH Woodruff, Q Xie, JW MaesUS Patent 9,711,396, 20174502017
5-) Methods for forming a semiconductor device and related semiconductor device structuresQ Xie, ME Givens, P Raisanen, JW MaesUS Patent 10,643,904, 20204432020