Qi Zhou

Qi Zhou

University of Electronic Science & Technology of China - Chengdu / China
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 679027
电子科技大学
person_outline Qi Zhou's MOST POPULAR ARTICLES
1-) 7.6 V Threshold Voltage High-Performance Normally-Off Al2O3/GaN MOSFET Achieved by Interface Charge EngineeringQ Zhou, L Liu, A Zhang, B Chen, Y Jin, Y Shi, Z Wang, W Chen, B ZhangIEEE Electron Device Letters 37 (2), 165-168, 2015952015
2-) Breakdown enhancement and current collapse suppression by high-resistivity GaN cap layer in normally-off AlGaN/GaN HEMTsR Hao, W Li, K Fu, G Yu, L Song, J Yuan, J Li, X Deng, X Zhang, Q Zhou, ...IEEE Electron Device Letters 38 (11), 1567-1570, 20171022017
3-) High reverse blocking and low onset voltage AlGaN/GaN-on-Si lateral power diode with MIS-gated hybrid anodeQ Zhou, Y Jin, Y Shi, J Mou, X Bao, B Chen, B ZhangIEEE Electron Device Letters 36 (7), 660-662, 20151002015
4-) Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNxPassivation and High-Temperature Gate RecessY Shi, S Huang, Q Bao, X Wang, K Wei, H Jiang, J Li, C Zhao, S Li, ...IEEE Transactions on Electron Devices 63 (2), 614-619, 2016982016
5-) High-Performance Enhancement-Mode Al2O3/AlGaN/GaN-on-Si MISFETs With 626 MW/Figure of MeritQ Zhou, B Chen, Y Jin, S Huang, K Wei, X Liu, X Bao, J Mou, B ZhangIEEE Transactions on Electron Devices 62 (3), 776-781, 2015902015