NEWS
Print Your Certificate
The 2025 AD Scientific Index is here—explore updated university and researcher rankings!
New! Young University / Institution Rankings 2025
New! The 2025 Edition of the AD Scientific Index is now live!
New! Art & Humanities Rankings 2025
New! Social Sciences and Humanities Rankings 2025
"Exciting Update! The 2025 Edition of the AD Scientific Index is now live!
AD
Scientific Index 2025
Scientist Rankings
University Rankings
Subject Rankings
Country Rankings
login
Login
person_add
Register
insights
H-Index Rankings
insights
i10 Productivity Rankings
format_list_numbered
Citation Rankings
subject
University Subject Rankings
school
Young Universities
format_list_numbered
Top 100 Scientists
format_quote
Top 100 Institutions
format_quote
Compare & Choose
local_fire_department
Country Reports
Rafaiel Ovanesyan
Colorado School of Mines - Golden / United States
Natural Sciences / Physics
AD Scientific Index ID: 5397254
Registration, Add Profile,
Premium Membership
Print Your Certificate
Ranking &
Analysis
Job
Experiences (0)
Education
Information (0)
Published Books (0)
Book Chapters (0)
Articles (0)
Presentations (0)
Lessons (0)
Projects (0)
Congresses (0)
Editorship, Referee &
Scientific Board (0 )
Patents /
Designs (0)
Academic Grants
& Awards (0)
Artistic
Activities (0)
Certificate / Course
/ Trainings (0)
Association &
Society Memberships (0)
Contact, Office
& Social Media
person_outline
Rafaiel Ovanesyan's MOST POPULAR ARTICLES
1-)
Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlookRA Ovanesyan, EA Filatova, SD Elliott, DM Hausmann, DC Smith, ...Journal of Vacuum Science & Technology A 37 (6), 20191042019
2-)
Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 PlasmaRA Ovanesyan, DM Hausmann, S AgarwalACS Applied Materials & Interfaces 7 (20), 10806-10813, 2015842015
3-)
A Three-Step Atomic Layer Deposition Process for SiNx Using Si2Cl6, CH3NH2, and N2 PlasmaRA Ovanesyan, DM Hausmann, S AgarwalACS applied materials & interfaces 10 (22), 19153-19161, 2018292018
4-)
Atomic Layer Deposition of SiCxNy Using Si2Cl6 and CH3NH2 PlasmaRA Ovanesyan, N Leick, KM Kelchner, DM Hausmann, S AgarwalChemistry of Materials 29 (15), 6269-6278, 2017292017
5-)
Challenges in atomic layer deposition of carbon-containing silicon-based dielectricsRA Ovanesyan, DM Hausmann, S AgarwalJournal of Vacuum Science & Technology A 35 (2), 2017212017
ARTICLES
Add your articles
We use cookies to personalize our website and offer you a better experience. If you accept cookies, we can offer you special services.
Cookie Policy
Accept