Raghavan Nagarajan

Singapore University of Technology and Design - Singapore / Singapore

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AD Scientific Index ID: 418546

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Raghavan Nagarajan's MOST POPULAR ARTICLES

1-) Recommended methods to study resistive switching devicesM Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...Advanced Electronic Materials 5 (1), 1800143, 20194982019

2-) Resistive switching: from fundamentals of nanoionic redox processes to memristive device applicationsD Ielmini, R WaserJohn Wiley & Sons, 20154982015

3-) Intrinsic switching variability in HfO2RRAMA Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ...2013 5th IEEE International Memory Workshop, 30-33, 20132222013

4-) Standards for the characterization of endurance in resistive switching devicesM Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ...ACS nano 15 (11), 17214-17231, 20211972021

5-) Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating currentYY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ...2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 20131472013

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