Raynaud

Raynaud

Institut National des Sciences Appliquées de Lyon - Villeurbanne / France
Others
AD Scientific Index ID: 918556
National Institute of Applied Sciences of Lyon
person_outline Raynaud's MOST POPULAR ARTICLES
1-) State of the art of high temperature power electronics Materials Science and Engineering: B 176 (4), 283-288, 2011
2-) Silica films on silicon carbide: a review of electrical properties and device applications Journal of Non-Crystalline Solids 280 (1-3), 1-31, 2001
3-) Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices Diamond and related materials 19 (1), 1-6, 2010
4-) Thermal stability of silicon carbide power diodes IEEE Transactions on electron devices 59 (3), 761-769, 2012
5-) Die attach of power devices using silver sintering-bonding process optimization and characterization HiTEN 2011, 1-7, 2011