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Reet Chaudhuri
Boyce Thompson Institute for Plant Research - New York / United States
Natural Sciences / Physics
AD Scientific Index ID: 4601450
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Reet Chaudhuri's MOST POPULAR ARTICLES
1-)
A polarization-induced 2D hole gas in undoped gallium nitride quantum wellsR Chaudhuri, SJ Bader, Z Chen, DA Muller, HG Xing, D JenaScience 365 (6460), 1454-1457, 2019802019
2-)
High breakdown voltage in RF AlN/GaN/AlN quantum well HEMTsA Hickman, R Chaudhuri, SJ Bader, K Nomoto, K Lee, HG Xing, D JenaIEEE Electron Device Letters 40 (8), 1293-1296, 2019612019
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Prospects for wide bandgap and ultrawide bandgap CMOS devicesSJ Bader, H Lee, R Chaudhuri, S Huang, A Hickman, A Molnar, HG Xing, ...IEEE Transactions on Electron Devices 67 (10), 4010-4020, 2020732020
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Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gasSJ Bader, R Chaudhuri, K Nomoto, A Hickman, Z Chen, HW Then, ...IEEE Electron Device Letters 39 (12), 1848-1851, 2018832018
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Next generation electronics on the ultrawide-bandgap aluminum nitride platformAL Hickman, R Chaudhuri, SJ Bader, K Nomoto, L Li, JCM Hwang, ...Semiconductor Science and Technology 36 (4), 044001, 2021682021
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