Reshmi Maity

Reshmi Maity

Mizoram University - Aizawl / India
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 534609
मिज़ोरम विश्वविद्यालय
person_outline Reshmi Maity's MOST POPULAR ARTICLES
1-) Comparative analysis of the quantum FinFET and trigate FinFET based on modeling and simulationNP Maity, R Maity, S Maity, S BaishyaJournal of Computational Electronics 18 (2), 492-499, 2019462019
2-) A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devicesNP Maity, R Maity, RK Thapa, S BaishyaSuperlattices and Microstructures 95, 24-32, 2016452016
3-) Voltage and oxide thickness dependent tunneling current density and tunnel resistivity model: application to high-k material HfO2 based MOS devicesNP Maity, R Maity, S BaishyaSuperlattices and Microstructures 111, 628-641, 2017392017
4-) Study of Interface Charge Densities for ZrO2 and HfO2 Based Metal‐Oxide‐Semiconductor DevicesNP Maity, R Maity, RK Thapa, S BaishyaAdvances in Materials Science and Engineering 2014 (1), 497274, 2014462014
5-) Analysis of surface potential for dual-material-double-gate MOSFET based on modeling and simulationH Chakrabarti, R Maity, NP MaityMicrosystem Technologies 25, 4675-4684, 2019402019