Richard Hill

Richard Hill

Micron Technology Inc - - / United States
Others
AD Scientific Index ID: 4523877
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person_outline Richard Hill's MOST POPULAR ARTICLES
1-) Enhancement-mode GaAs MOSFETs with an In0. 3 Ga0. 7As channel, a mobility of over 5000 cm2/V· s, and transconductance of over 475 μS/μmRJW Hill, DAJ Moran, X Li, H Zhou, D Macintyre, S Thoms, A Asenov, ...IEEE Electron Device Letters 28 (12), 1080-1082, 20072262007
2-) High mobility III-V MOSFETs for RF and digital applicationsM Passlack, P Zurcher, K Rajagopalan, R Droopad, J Abrokwah, M Tutt, ...2007 IEEE International Electron Devices Meeting, 621-624, 20071112007
3-) GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench directionT Orzali, A Vert, B O\\\'Brien, JL Herman, S Vivekanand, RJW Hill, Z Karim, ...Journal of Applied Physics 118 (10), 2015652015
4-) Threshold voltage shift due to charge trapping in dielectric-gated AlGaN/GaN high electron mobility transistors examined in Au-free technologyDW Johnson, RTP Lee, RJW Hill, MH Wong, G Bersuker, EL Piner, ...IEEE transactions on electron devices 60 (10), 3197-3203, 2013662013
5-) Positive bias instability and recovery in InGaAs channel nMOSFETsS Deora, G Bersuker, WY Loh, D Veksler, K Matthews, TW Kim, RTP Lee, ...IEEE Transactions on Device and Materials Reliability 13 (4), 507-514, 2013532013