Ritam Sarkar

Ritam Sarkar

Interuniversity Microelectronics Centre - Leuven / Belgium
Others
AD Scientific Index ID: 6028454
person_outline Ritam Sarkar's MOST POPULAR ARTICLES
1-) Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power applicationR Sarkar, S Bhunia, D Nag, BC Barik, K Das Gupta, D Saha, S Ganguly, ...Applied Physics Letters 115 (6), 2019182019
2-) A highly sensitive and robust GaN ultraviolet photodetector fabricated on 150-mm Si (111) waferRS Pokharia, R Sarkar, S Singh, S Deb, S Suihkonen, J Lemettinen, ...IEEE Transactions on Electron Devices 68 (6), 2796-2803, 2021132021
3-) Role of defect saturation in improving optical response from InGaN nanowires in higher wavelength regimeD Nag, R Sarkar, S Bhunia, T Aggarwal, K Ghosh, S Sinha, S Ganguly, ...Nanotechnology 31 (49), 495705, 2020142020
4-) Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved ION/IOFF Operating at 473 KR Sarkar, BB Upadhyay, S Bhunia, RS Pokharia, D Nag, S Surapaneni, ...IEEE Transactions on Electron Devices 68 (6), 2653-2660, 2021132021
5-) Carrier-induced defect saturation in green InGaN LEDs: A potential phenomenon to enhance efficiency at higher wavelength regimeD Nag, T Aggarwal, S Sinha, R Sarkar, S Bhunia, YF Chen, S Ganguly, ...Acs Photonics 8 (3), 926-932, 2021132021