Roxann Russell Blanchard

Roxann Russell Blanchard

Analog Devices, Inc. - / United States
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 5192422
person_outline Roxann Russell Blanchard's MOST POPULAR ARTICLES
1-) On-state breakdown in power HEMTs: Measurements and modelingMH Somerville, R Blanchard, JA del Alamo, KG Duh, PC ChaoIEEE Transactions on Electron Devices 46 (6), 1087-1093, 1999781999
2-) A new gate current extraction technique for measurement of on-state breakdown voltage in HEMTsMH Somerville, R Blanchard, JA del Alamo, G Duh, PC ChaoIEEE Electron Device Letters 19 (11), 405-407, 1998601998
3-) Hydrogen-induced piezoelectric effects in InP HEMT\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\'sRR Blanchard, JA del Alamo, SB Adams, PC Chao, A CornetIEEE Electron Device Letters 20 (8), 393-395, 1999331999
4-) Hydrogen degradation in InP HEMTsRR Blanchard, JA del Alamo, PC Chao, SB AdamsInternational Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998161998
5-) Titanium Hydride Formation in Ti/Pt/Au-Gated InP HEMTsRR Blanchard, A Comet, JA del AlamoIEEE Electron Device Letters 21 (9), 424-426, 2000152000