Ruqiang Bao

Ruqiang Bao

IBM Corporation - New York / United States
Business & Management / Business Administration
AD Scientific Index ID: 4465127
person_outline Ruqiang Bao's MOST POPULAR ARTICLES
1-) Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFETN Loubet, T Hook, P Montanini, CW Yeung, S Kanakasabapathy, ...2017 Symposium on VLSI Technology, T230-T231, 20175132017
2-) Surface treatment in a dep-etch-dep processR Bao, DA Ferrer, F Papadatos, DP StambaughUS Patent App. 14/057,529, 20153012015
3-) High performance 14nm SOI FinFET CMOS technology with 0.0174µm2embedded DRAM and 15 levels of Cu metallizationCH Lin, B Greene, S Narasimha, J Cai, A Bryant, C Radens, V Narayanan, ...2014 IEEE International Electron Devices Meeting, 3.8. 1-3.8. 3, 20141562014
4-) Hollow particles formed on laser-induced bubbles by excimer laser ablation of Al in liquidZ Yan, R Bao, Y Huang, DB ChriseyThe Journal of Physical Chemistry C 114 (26), 11370-11374, 20101032010
5-) Full bottom dielectric isolation to enable stacked nanosheet transistor for low power and high performance applicationsJ Zhang, J Frougier, A Greene, X Miao, L Yu, R Vega, P Montanini, ...2019 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2019742019