Ruyue Cao

Ruyue Cao

Institute of Semiconductors, Chinese Academy of Sciences - Beijing / China
Others
AD Scientific Index ID: 4722372
-
person_outline Ruyue Cao's MOST POPULAR ARTICLES
1-) GaN as an interfacial passivation layer: Tuning band offset and removing fermi level pinning for III–V MOS devicesZ Zhang, R Cao, C Wang, HB Li, H Dong, W Wang, F Lu, Y Cheng, X Xie, ...ACS Applied Materials & Interfaces 7 (9), 5141-5149, 2015282015
2-) Design Principles of p-Type Transparent Conductive MaterialsR Cao, HX Deng, J LuoACS Appl. Mater. Interfaces, 2019252019
3-) Extrinsic photoconduction induced short‐wavelength infrared photodetectors based on Ge‐based chalcogenidesT He, Z Wang, R Cao, Q Li, M Peng, R Xie, Y Huang, Y Wang, J Ye, P Wu, ...Small 17 (4), 2006765, 2021312021
4-) First-principles study of defect control in thin-film solar cell materialsHX Deng, RY Cao, SH WeiScience China Physics, Mechanics & Astronomy 64, 1-18, 2021182021
5-) Interfacial bonding and electronic structure of GaN/GaAs interface: A first-principles studyR Cao, Z Zhang, C Wang, H Li, X Xie, H Dong, H Liu, W WangJournal of Applied Physics 117 (13), 2015142015