S. Lawrence Selvaraj

S. Lawrence Selvaraj

GlobalFoundries - New York / United States
Others
AD Scientific Index ID: 5050639
person_outline S. Lawrence Selvaraj's MOST POPULAR ARTICLES
1-) Breakdown enhancement of AlGaN/GaN HEMTs on 4-in silicon by improving the GaN quality on thick buffer layers SL Selvaraj, T Suzue, T Egawa IEEE electron device letters 30 (6), 587-589, 2009 2482009
2-) Buffer thickness contribution to suppress vertical leakage current with high breakdown field (2.3 MV/cm) for GaN on Si IB Rowena, SL Selvaraj, T Egawa IEEE Electron Device Letters 32 (11), 1534-1536, 2011 1612011
3-) 1.4-kV breakdown voltage for AlGaN/GaN high-electron-mobility transistors on silicon substrate SL Selvaraj, A Watanabe, A Wakejima, T Egawa IEEE electron device letters 33 (10), 1375-1377, 2012 1112012
4-) Improved Power Device Figure-of-Merit (4.0× 108 V2 Ω-1 cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. SiS Arulkumaran, S Vicknesh, NG Ing, SL Selvaraj, T EgawaApplied physics express 4 (8), 084101, 2011752011
5-) AlN∕ AlGaN∕ GaN metal-insulator-semiconductor high-electron-mobility transistor on 4in. Silicon substrate for high breakdown characteristicsSL Selvaraj, T Ito, Y Terada, T EgawaApplied physics letters 90 (17), 2007612007