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Sachin Yadav
Interuniversity Microelectronics Centre - Leuven / Belgium
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AD Scientific Index ID: 6032259
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Sachin Yadav's MOST POPULAR ARTICLES
1-)
Germanium-tin (GeSn) P-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrateD Lei, KH Lee, YC Huang, W Wang, S Masudy-Panah, S Yadav, A Kumar, ...IEEE Transactions on Electron Devices 65 (9), 3754-3761, 2018352018
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The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETsD Lei, KH Lee, S Bao, W Wang, S Masudy-Panah, S Yadav, A Kumar, ...2017 Symposium on VLSI Technology, T198-T199, 2017332017
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GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOLB Parvais, A Alian, U Peralagu, R Rodriguez, S Yadav, A Khaled, ...2020 IEEE International Electron Devices Meeting (IEDM), 8.1. 1-8.1. 4, 2020282020
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SiGe and III-V materials and devices: New HEMT and LED elements in 0.18-micron CMOS process and designEA Fitzgerald, KE Lee, SF Yoon, SJ Chua, CS Tan, GI Ng, X Zhou, ...ECS Transactions 75 (8), 439, 2016242016
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Heteroepitaxial growth of In0. 30Ga0. 70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded bufferD Kohen, XS Nguyen, S Yadav, A Kumar, RI Made, C Heidelberger, ...AIP Advances 6 (8), 2016212016
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