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Saleem Hamady
American University of the Middle East - - / Kuwait
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AD Scientific Index ID: 4755310
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Saleem Hamady's MOST POPULAR ARTICLES
1-)
New concepts for normally-off power gallium nitride (GaN) high electron mobility transistor (HEMT)S HamadyUniversite Toulouse III Paul Sabatier, 2014362014
2-)
A new concept of enhanced-mode GaN HEMT using fluorine implantation in the GaN layerS Hamady, F Morancho, B Beydoun, P Austin, M Gavelle2013 15th European Conference on Power Electronics and Applications (EPE), 1-6, 2013172013
3-)
Original field plate to decrease the maximum electric field peak for high-voltage diamond Schottky diodeH Arbess, K Isoird, S Hamady, M Zerarka, D PlansonIEEE Transactions on Electron Devices 62 (9), 2945-2951, 2015152015
4-)
P-doped region below the AlGaN/GaN interface for normally-off HEMTS Hamady, F Morancho, B Beydoun, P Austin, M Gavelle2014 16th European Conference on Power Electronics and Applications, 1-8, 2014142014
5-)
Heterojunction-based HEMT transistorF Morancho, S Hamady, B BeydounUS Patent 9,831,331, 201752017
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