Sanad Bushnaq

Sanad Bushnaq

Massachusetts Institute of Technology - Cambridge / United States
Others
AD Scientific Index ID: 6033637
person_outline Sanad Bushnaq's MOST POPULAR ARTICLES
1-) A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technologyH Maejima, K Kanda, S Fujimura, T Takagiwa, S Ozawa, J Sato, Y Shindo, ...2018 IEEE International Solid-State Circuits Conference-(ISSCC), 336-338, 2018712018
2-) A 128Gb 1-bit/Cell 96-Word-Line-Layer 3D Flash Memory to Improve the Random Read Latency With tProg = 75 μs and tR = 4 μsT Kouchi, M Kakoi, N Kumazaki, A Sugahara, A Imamoto, Y Kajiyama, ...IEEE Journal of Solid-State Circuits 56 (1), 225-234, 2020212020
3-) 13.5 A 128Gb 1b/Cell 96-Word-Line-Layer 3D Flash Memory to Improve Random Read Latency with tPROG=75µs and tR=4µsT Kouchi, N Kumazaki, M Yamaoka, S Bushnaq, T Kodama, Y Ishizaki, ...2020 IEEE International Solid-State Circuits Conference-(ISSCC), 226-228, 202021*2020
4-) Semiconductor memory device and memory system, read orderS Bushnaq, T Akamine, M ShirakawaUS Patent 9,767,910, 2017202017
5-) Semiconductor memory device, double side decodingS Bushnaq, M ShirakawaUS Patent 9,773,555, 2017152017