Sang Hoon Shin

Sang Hoon Shin

Samsung Electronics, South Korea - Gyeonggi / South Korea
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 4503580
삼성전자, 한국
person_outline Sang Hoon Shin's MOST POPULAR ARTICLES
1-) A 1.2 V 20 nm 307 GB/s HBM DRAM with at-speed wafer-level IO test scheme and adaptive refresh considering temperature distributionK Sohn, WJ Yun, R Oh, CS Oh, SY Seo, MS Park, DH Shin, WC Jung, ...IEEE Journal of Solid-State Circuits 52 (1), 250-260, 2016712016
2-) A 1.2 V 20 nm 307 GB/s HBM DRAM with at-speed wafer-level IO test scheme and adaptive refresh considering temperature distributionK Sohn, WJ Yun, R Oh, CS Oh, SY Seo, MS Park, DH Shin, WC Jung, ...2016 IEEE International Solid-State Circuits Conference (ISSCC), 316-317, 2016712016
3-) A 0.1-to-1.5 GHz 4.2 mW all-digital DLL with dual duty-cycle correction circuit and update gear circuit for DRAM in 66nm CMOS technologyWJ Yun, HW Lee, D Shin, SD Kang, JY Yang, HO Lee, DU Lee, S Sim, ...2008 IEEE International Solid-State Circuits Conference-Digest of Technical …, 2008402008
4-) Semiconductor device having a plurality of repair fuse unitsJ Lee, H Lee, S Shin, H ChoiUS Patent 8,110,892, 2012182012
5-) Semiconductor device having a plurality of repair fuse unitsJW Lee, HD Lee, SH Shin, HH ChoiUS Patent 8,698,276, 2014142014