Sanghyeon Kim

Sanghyeon Kim

Korea Advanced Institute of Science & Technology KAIST - Daejeon / South Korea
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 417041
한국 고급 과학 기술 연구소 KAIST
person_outline Sanghyeon Kim's MOST POPULAR ARTICLES
1-) 1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current …R Suzuki, N Taoka, M Yokoyama, S Lee, SH Kim, T Hoshii, T Yasuda, ...Applied Physics Letters 100 (13), 132906, 20121762012
2-) Self-aligned metal source/drain In x Ga 1− x As n-MOSFETs using Ni-InGaAs alloySH Kim, M Yokoyama, N Taoka, R Iida, S Lee, R Nakane, Y Urabe, ...Electron Devices Meeting (IEDM), 2010 IEEE International, 26.6. 1-26.6. 4, 2010119*2010
3-) A highly-efficient, concentrating-photovoltaic/thermoelectric hybrid generatorTH Kil, S Kim, DH Jeong, DM Geum, S Lee, SJ Jung, S Kim, C Park, ...Nano energy 37, 242-247, 20171042017
4-) III–V/Ge channel MOS device technologies in nano CMOS eraS Takagi, R Zhang, J Suh, SH Kim, M Yokoyama, K Nishi, M TakenakaJapanese Journal of Applied Physics 54 (6S1), 06FA01, 20151062015
5-) High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctionsM Noguchi, SH Kim, M Yokoyama, O Ichikawa, T Osada, M Hata, ...Journal of Applied Physics 118 (4), 20151002015