Sanghyun Ban

Pohang University of Science & Technology - Pohang / South Korea

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AD Scientific Index ID: 4858452

포항공과대학교

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Sanghyun Ban's MOST POPULAR ARTICLES

1-) Pulse dependent threshold voltage variation of the ovonic threshold switch in cross-point memoryS Ban, H Choi, W Lee, S Hong, H Zang, B Lee, M Kim, S Lee, H Lee, ...IEEE Electron Device Letters 41 (3), 373-376, 2020

2-) Effect of Silicon Doping in B–Te (B4Te6) Binary Ovonic Threshold Switch SystemS Ban, S Lee, J Lee, H HwangIEEE Electron Device Letters 43 (4), 643-646, 2022

3-) Improvement of switching uniformity in HfOx-based resistive random access memory with a titanium film and effects of titanium on resistive switching behaviorsS Ban, O KimJapanese Journal of Applied Physics 53 (6S), 06JE15, 2014162014

4-) Defect engineering of BTe ovonic threshold switch (OTS) with nitrogen doping for improved electrical and reliability performanceJ Lee, S Ban, TH Lee, H HwangIEEE Electron Device Letters 44 (9), 1468-1471, 2023

5-) Understanding switching mechanism of selector-only memory using Se-based ovonic threshold switch deviceJ Lee, Y Seo, S Ban, DG Kim, YB Park, TH Lee, H HwangIEEE Transactions on Electron Devices, 2024

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