Sangwan Kim

Sangwan Kim

Ajou University - Berlin / South Korea
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 453687
아주대학교
person_outline Sangwan Kim's MOST POPULAR ARTICLES
1-) Demonstration of L-shaped tunnel field-effect transistorsSW Kim, JH Kim, TJK Liu, WY Choi, BG ParkIEEE transactions on electron devices 63 (4), 1774-1778, 20152352015
2-) Design guideline of Si-based L-shaped tunneling field-effect transistorsSW Kim, WY Choi, MC Sun, HW Kim, BG ParkJapanese Journal of Applied Physics 51 (6S), 06FE09, 20121262012
3-) Double-gate TFET with vertical channel sandwiched by lightly doped SiJH Kim, S Kim, BG ParkIEEE Transactions on Electron Devices 66 (4), 1656-1661, 20191032019
4-) Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown RecoveryK Chatterjee, S Kim, G Karbasian, AJ Tan, AK Yadav, AI Khan, C Hu, ...IEEE Electron Device Letters 38 (10), 1379-1382, 20171002017
5-) Simulation of the effect of parasitic channel height on characteristics of stacked gate-all-around nanosheet FETY Choi, K Lee, KY Kim, S Kim, J Lee, R Lee, HM Kim, YS Song, S Kim, ...Solid-State Electronics 164, 107686, 2020542020