Saptarshi Mandal

Saptarshi Mandal

Intel Corporation - California / United States
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 4458128
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person_outline Saptarshi Mandal's MOST POPULAR ARTICLES
1-) Novel synaptic memory device for neuromorphic computingS Mandal, A El-Amin, K Alexander, B Rajendran, R JhaScientific reports 4 (1), 1-10, 20141012014
2-) Normally OFF trench CAVET with active Mg-doped GaN as current blocking layerD Ji, MA Laurent, A Agarwal, W Li, S Mandal, S Keller, S ChowdhuryIEEE Transactions on Electron Devices 64 (3), 805-808, 2016692016
3-) Dispersion free 450-V p GaN-gated CAVETs with Mg-ion implanted blocking layerS Mandal, A Agarwal, E Ahmadi, KM Bhat, D Ji, MA Laurent, S Keller, ...IEEE Electron Device Letters 38 (7), 933-936, 2017432017
4-) Switching dynamics and charge transport studies of resistive random access memory devicesB Long, Y Li, S Mandal, R Jha, K LeedyApplied Physics Letters 101 (11), 2012442012
5-) Effects of Mg-Doping on -Based ReRAM Device Switching CharacteristicsBM Long, S Mandal, J Livecchi, R JhaIEEE electron device letters 34 (10), 1247-1249, 2013352013