Satoshi Kamiyama

Satoshi Kamiyama

Meijo University - Nagoya / Japan
Others
AD Scientific Index ID: 412305
名城大学
person_outline Satoshi Kamiyama's MOST POPULAR ARTICLES
1-) Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductorsSF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ...Nature materials 5 (10), 810-816, 20067922006
2-) Improved efficiency of 255–280 nm AlGaN-based light-emitting diodesC Pernot, M Kim, S Fukahori, T Inazu, T Fujita, Y Nagasawa, A Hirano, ...Applied physics express 3 (6), 061004, 20102972010
3-) Internal quantum efficiency of whole-composition-range AlGaN multiquantum wellsK Ban, J Yamamoto, K Takeda, K Ide, M Iwaya, T Takeuchi, S Kamiyama, ...Applied physics express 4 (5), 052101, 20112852011
4-) 350.9 nm UV laser diode grown on low-dislocation-density AlGaNK Iida, T Kawashima, A Miyazaki, H Kasugai, S Mishima, A Honshio, ...Japanese journal of applied physics 43 (4A), L499, 20042042004
5-) Lateral hydrogen diffusion at p-GaN layers in nitride-based light emitting diodes with tunnel junctionsY Kuwano, M Kaga, T Morita, K Yamashita, K Yagi, M Iwaya, T Takeuchi, ...Japanese Journal of Applied Physics 52 (8S), 08JK12, 20131592013