Shahab Siddiqui

Shahab Siddiqui

IBM Corporation - New York / United States
Engineering & Technology / Metallurgical & Materials Engineering
AD Scientific Index ID: 4465276
person_outline Shahab Siddiqui's MOST POPULAR ARTICLES
1-) Thermal oxide equivalent low temperature ALD oxide for dual purpose gate oxide and method for producing the same US Patent 10,106,892, 2018
2-) Hybrid bonding interface for 3-dimensional chip integration US Patent 8,159,060, 2012
3-) Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric US Patent 8,373,239, 2013
4-) High Performance 14nm SOI FinFET CMOS Technology with 0.0174 μ m2 embedded DRAM and 15 Levels of Cu Metallization IEDM, 2014, 2014
5-) A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications 2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011