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Shihyun Ahn
University of Florida - Gainesville / United States
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AD Scientific Index ID: 1612880
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Shihyun Ahn's MOST POPULAR ARTICLES
1-)
High Breakdown Voltage (−201) -Ga2O3 Schottky RectifiersJ Yang, S Ahn, F Ren, SJ Pearton, S Jang, A KuramataIEEE Electron Device Letters 38 (7), 906-909, 20171732017
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High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3J Yang, S Ahn, F Ren, SJ Pearton, S Jang, J Kim, A KuramataApplied Physics Letters 110 (19), 192101, 20171722017
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Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistorsS Ahn, F Ren, J Kim, S Oh, J Kim, MA Mastro, SJ PeartonApplied Physics Letters 109 (6), 062102, 20161072016
4-)
Temperature-dependent characteristics of Ni/Au and Pt/Au Schottky diodes on β-Ga2O3S Ahn, F Ren, L Yuan, SJ Pearton, A KuramataECS Journal of Solid State Science and Technology 6 (1), P68, 20171062017
5-)
Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 photodetectorsS Ahn, YH Lin, F Ren, S Oh, Y Jung, G Yang, J Kim, MA Mastro, JK Hite, ...Journal of Vacuum Science & Technology B 34 (4), 2016932016
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