Shiyang Ji

Shiyang Ji

National Institute of Advanced Industrial Science & Technology (AIST) - / Japan
Engineering & Technology / Metallurgical & Materials Engineering
AD Scientific Index ID: 4460995
person_outline Shiyang Ji's MOST POPULAR ARTICLES
1-) Breaking the theoretical limit of 6.5 kV-class 4H-SiC super-junction (SJ) MOSFETs by trench-filling epitaxial growth 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019
2-) Filling 4H-SiC trench towards selective epitaxial growth by adding HCl to CVD process Applied physics express 8 (6), 065502, 2015
3-) The growth of low resistivity, heavily Al-doped 4H–SiC thick epilayers by hot-wall chemical vapor deposition Journal of crystal growth 380, 85-92, 2013
4-) Strong impact of slight trench direction misalignment from on deep trench filling epitaxy for SiC super-junction devices Japanese journal of applied physics 56 (4S), 04CR05, 2017
5-) Low resistivity, thick heavily Al-doped 4H-SiC epilayers grown by hot-wall chemical vapor deposition Materials Science Forum 740, 181-184, 2013