Simone Lavizzari

Simone Lavizzari

Sony Corporation - Tokyo / Japan
Engineering & Technology / Computer Science
AD Scientific Index ID: 4407056
person_outline Simone Lavizzari's MOST POPULAR ARTICLES
1-) Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation 2007 IEEE International Electron Devices Meeting, 939-942, 2007
2-) Reliability impact of chalcogenide-structure relaxation in phase-change memory (PCM) cells—Part I: Experimental study IEEE Transactions on Electron Devices 56 (5), 1070-1077, 2009
3-) Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory 2018 IEEE International Electron Devices Meeting (IEDM), 2.5. 1-2.5. 4, 2018
4-) Statistics of resistance drift due to structural relaxation in phase-change memory arrays IEEE Transactions on Electron Devices 57 (10), 2690-2696, 2010
5-) Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5 Applied Physics Letters 92 (19), 2008