Siwei Yang

Siwei Yang

Shanghai Institute of Microsystem and Information Technology - Shanghai / China
Engineering & Technology / Metallurgical & Materials Engineering
AD Scientific Index ID: 4600437
上海微系统和信息技术研究所
person_outline Siwei Yang's MOST POPULAR ARTICLES
1-) C3N—A 2D Crystalline, Hole‐Free, Tunable‐Narrow‐Bandgap Semiconductor with Ferromagnetic PropertiesS Yang, W Li, C Ye, G Wang, H Tian, C Zhu, P He, G Ding, X Xie, Y Liu, ...Advanced Materials 29 (16), 1605625, 20173762017
2-) Large-scale fabrication of heavy doped carbon quantum dots with tunable-photoluminescence and sensitive fluorescence detectionS Yang, J Sun, X Li, W Zhou, Z Wang, P He, G Ding, X Xie, Z Kang, ...Journal of Materials Chemistry A 2 (23), 8660-8667, 20143722014
3-) Facile and highly effective synthesis of controllable lattice sulfur-doped graphene quantum dots via hydrothermal treatment of durianG Wang, Q Guo, D Chen, Z Liu, X Zheng, A Xu, S Yang, G DingACS applied materials & interfaces 10 (6), 5750-5759, 20182082018
4-) Carbon‐based quantum dots with solid‐state photoluminescent: mechanism, implementation, and applicationA Xu, G Wang, Y Li, H Dong, S Yang, P He, G DingSmall 16 (48), 2004621, 20202382020
5-) Ultra‐High Quantum Yield of Graphene Quantum Dots: Aromatic‐Nitrogen Doping and Photoluminescence MechanismJ Sun, S Yang, Z Wang, H Shen, T Xu, L Sun, H Li, W Chen, X Jiang, ...Particle & Particle Systems Characterization 32 (4), 434-440, 20152252015