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Steven Bentley
GlobalFoundries - New York / United States
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AD Scientific Index ID: 5050641
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Steven Bentley's MOST POPULAR ARTICLES
1-)
Continuous flow in open microfluidics using controlled evaporation M Zimmermann, S Bentley, H Schmid, P Hunziker, E Delamarche Lab on a Chip 5 (12), 1355-1359, 2005 1102005
2-)
Methods of forming vertical transistor devices with self-aligned top source/drain conductive contacts JH Zhang, C Radens, SJ Bentley, BA Cohen, KY Lim US Patent 9,530,866, 2016 852016
3-)
Methods of forming nanosheet transistor with dielectric isolation of source-drain regions and related structureJ Frougier, MG Sung, R Xie, C Park, S BentleyUS Patent 9,947,804, 2018662018
4-)
Methods of forming replacement gate structures and bottom and top source/drain regions on a vertical transistor deviceSJ Bentley, JH Zhang, KY Lim, H NiimiUS Patent 9,640,636, 2017622017
5-)
Self-aligned gate-first VFETs using a gate spacer recessJH Zhang, KY Lim, SJ Bentley, C ParkUS Patent 9,536,793, 2017592017
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