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Suman Das,
AD Scientific Index 2024
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Auburn University - Auburn / United States
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Suman Das,'s MOST POPULAR ARTICLES
1-)
High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistorsS Das, T Isaacs-Smith, A Ahyi, MA Kuroda, S DharJournal of Applied Physics 130 (22), 202192021
2-)
Study of carrier mobilities in 4H-SiC MOSFETS using Hall analysisS Das, Y Zheng, A Ahyi, MA Kuroda, S DharMaterials 15 (19), 6736, 202282022
3-)
Trap passivation of 4H-SiC/SiO2 interfaces by nitrogen annealingS Das, H Gu, L Wang, A Ahyi, LC Feldman, E Garfunkel, MA Kuroda, ...Journal of Applied Physics 133 (21), 202322023
4-)
Study of Dopant Activation and Ionization for Phosphorus in 4H-SiCS Das, DJ Lichtenwalner, H Dixit, S Rogers, A Scholze, SH RyuJournal of Electronic Materials 53 (6), 2806-2810, 20242024
5-)
Characterization of Interface Trap Density in SiC MOSFETs Subjected to High Voltage Gate StressSR Stein, J Kim, S Das, DJ Lichtenwalner, S Ryu2024 IEEE International Reliability Physics Symposium (IRPS), 1-5, 20242024
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