NEWS
New Feature!!!! University Subject Rankings in 12 branches
FOR SCIENTIST REGISTRATION FOR INSTITUTIONAL BULK REGISTRATION
FOR EDIT YOUR UNIVERSITY / INSTITUTION PAGE
Some differences of the AD Scientific Index
New Feature!!!! University Subject Rankings in 12 branches
List without CERN, Statistical Data etc. Only in AD Scientific Index
New Feature!!!! University Subject Rankings in 12 branches
AD
Scientific Index 2024
About Us
Methodology
Compare & Choose
Contact - FAQ
login
Login
person_add
Register
insights
i10 Productivity Rankings
format_list_numbered
Citation Rankings
school
University Rankings
subject
University Subject Rankings
insights
Subject Rankings
place
Country Rankings
format_list_numbered
Top 100 Scientists
format_quote
Top 100 Institutions
local_fire_department
Country Top Lists
Sung-Wei Huang
National Taiwan University - Taipei City / Taiwan
Others
AD Scientific Index ID: 5519128
國立台灣大學
Edit Form
Registration, Add Profile,
Premium Membership
Ranking &
Analysis
Job
Experiences (0)
Education
Information (0)
Published Books (0)
Book Chapters (0)
Articles (0)
Presentations (0)
Lessons (0)
Projects (0)
Congresses (0)
Editorship, Referee &
Scientific Board (0 )
Patents /
Designs (0)
Academic Grants
& Awards (0)
Artistic
Activities (0)
Certificate / Course
/ Trainings (0)
Association &
Society Memberships (0)
Contact, Office
& Social Media
person_outline
Sung-Wei Huang's MOST POPULAR ARTICLES
1-)
Improved two states characteristics in MIS tunnel diodes by oxide local thinning enhanced transient current behaviorSW Huang, JG HwuIEEE Transactions on Electron Devices 69 (12), 7107-7112, 202262022
2-)
Transient current enhancement in MIS tunnel diodes with lateral electric field induced by designed high-low oxide layersSW Huang, JG HwuIEEE Transactions on Electron Devices 68 (12), 6580-6585, 202152021
3-)
Study and Optimization of Two-State Transient Currents at Millisecond Time Scales in MIS Tunnel DiodesSW Huang, JG HwuIEEE Transactions on Electron Devices 70 (10), 4999 - 5006, 202322023
4-)
Comprehensive Study of Inversion Capacitance in Metal-Insulator-Semiconductor Capacitor With Existing Oxide ChargesKC Chen, KW Lin, SW Huang, JY Lin, JG HwuIEEE Journal of the Electron Devices Society 10, 960-969, 202222022
5-)
Saturation of transient current read at millisecond-scale in MOS capacitor with ultra-thin oxide when switchingSW Huang, JG Hwu2023 International VLSI Symposium on Technology, Systems and Applications …, 202312023
ARTICLES
Add your articles
We use cookies to personalize our website and offer you a better experience. If you accept cookies, we can offer you special services.
Cookie Policy
Accept