Tae Jin Park

Samsung Electronics, South Korea - Gyeonggi / South Korea

Engineering & Technology / Electrical & Electronic Engineering

AD Scientific Index ID: 4439236

삼성전자, 한국

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Tae Jin Park's MOST POPULAR ARTICLES

1-) PRAM cell technology and characterization in 20nm node size 2011 International Electron Devices Meeting, 3.1. 1-3.1. 4, 2011

2-) Atomic layer deposition of Al 2 O 3 on MoS 2, WS 2, WSe 2, and h-BN: surface coverage and adsorption energy RSC Advances 7 (2), 884-889, 2017

3-) Phase transition characteristics of Bi/Sn doped Ge 2 Sb 2 Te 5 thin film for PRAM application Thin Solid Films 515 (12), 5049-5053, 2007

4-) Preparation and characterization of CuO doped Bi2O3–B2O3–BaO–ZnO glass system for transparent dielectric layer Journal of non-crystalline solids 352 (50-51), 5403-5407, 2006

5-) Electrical properties and crystallization behavior of Sb x Se100− x thin films Microsystem technologies 13 (2), 153-159, 2007

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