Tahir Khan

Tahir Khan

University of Chicago Booth School of Business - Chicago / United States
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 1772893
Chicago Booth
person_outline Tahir Khan's MOST POPULAR ARTICLES
1-) Enhancement-mode n-channel GaN MOSFETs on p and n-GaN/sapphire substratesW Huang, T Khan, TP Chow2006 IEEE International Symposium on Power Semiconductor Devices and IC\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\'s, 1-4, 20061832006
2-) Comparison of MOS capacitors on n-and p-type GaNW Huang, T Khan, T Paul ChowJournal of electronic materials 35 (4), 726-732, 2006852006
3-) The effect of gate oxide processes on the performance of 4H-SiC MOSFETs and gate-controlled diodesY Wang, K Tang, T Khan, MK Balasubramanian, H Naik, W Wang, ...IEEE transactions on electron devices 55 (8), 2046-2053, 2008602008
4-) Semiconductor device with increased snapback voltageBH Grote, VK Khemka, TA Khan, W Huang, R ZhuUS Patent 8,193,585, 2012422012
5-) Methods of making laterally double diffused metal oxide semiconductor transistors having a reduced surface field structureBH Grote, TA Khan, VK Khemka, R ZhuUS Patent 8,623,732, 2014302014